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--- ag2s:ag2s_thin_film_deposition [2005/02/08 13:34] – (old revision restored) 127.0.0.1
+++ ag2s:ag2s_thin_film_deposition [2005/02/08 13:47] (current) – external edit 127.0.0.1
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+== Feb. 08, 2005 ==
+Both\\
+{{ag2s:armantrout_et_al._j.vac.sci.tech._16_212_1979_.pdf}} and\\
+{{ag2s:reactively_sputtered_cu2s_films_and_cu2-cds_solar_cells.pdf}}
+try to establish the optimal partial pressure of H2S during reactive sputter deposition of Cu2.0 - S1.0 film (chalcocite). My estimate of the values for partial pressure of H2S from these articles is 9x10-4 mbar and ~1x10-3 mbar, respectively (**please verify, I do make mistakes!**) I am planning to try these pressures during the sputtering run on Friday.
+Analysis of the samples can be done with microprobe (using the SEM that used to stand on the 6th floor and is now moved to Amsterdam), resistivity measurements and x-ray for thicker films.
+//-Alex//