Differences

This shows you the differences between two versions of the page.

--- cressington_sputter_coater_208hr [2015/08/07 15:04] – steenis
+++ cressington_sputter_coater_208hr [2015/08/10 08:04] (current) – steenis
@@ Line 4: / Line 4: @@
 ===== Sample Loading =====
+  - Lift the top plate and remove the glass cylinder. Take care that the top-plate does not fall forward. The target can be damaged by striking the sample table.
+  - Place your sample, mounted on a stub, on the stage.
+  - Unlock the tilt lever of the stage.
+  - Set tilt at desired angle and lock the tilt lever again.
+  - If a thickness controlled process will be used change the angle of the thickness crystal so that it faces towards the sputter target.
+  - Check that the stage isn't hindered by the wire of the thickness crystal by letting the stage rotate at the desired speed.
+  - Replace glass cylinder and gently lower the top plate. Check that the top plate sits correctly on the glass cylinder.
+  - Turn on the system and allow the system to pump to better than 0,01 mbar and then wait for another 5 minutes.
+===== Automatic Controlled Process =====
+==== Pre-Sputtering ====
+   - Select Auto with the auto/manual button.
+   - Select timer.
+   - Set pre-sputtering time at 10 seconds by holding PAUSE/TEST and pressing the timer SET buttons.
+   - Set pre-sputter current to desired value by holding the SET mA button and pressing the timer SET buttons. Available currents 20, 40, 60, and 80 mA.
+   - Make sure the shutter is closed
+   - Press CYCLE/STOP to start pre-sputering process. The system will proceed through its standard cycle.
+==== Sputtering ====
+   - Select timer for a timed process or MTM for a thickness controlled process.
+        - Timed process, Change sputtering time by holding PAUSE/TEST and pressing the timer SET buttons. Time can be set between 5 and 300 seconds.
+        - Thickness controlled process
+             - Turn on the thickness monitor (MTM 20)
+             - Set the correct density according to the target material by pressing the DENSITY button once and find the correct setting by scrolling with the scroll buttons.
+             - Set the correct tooling factor according to stage tilt by pressing the TOOLING button once and find the correct setting by scrolling with the scroll buttons.
+             - Set desired coating thickness by holding the TERMINATOR button for one second. The value for the thickness will show up and can be adjusted with the scroll buttons.
+   - Set sputter current to desired value by holding the SET mA button and pressing the timer SET buttons. Available currents 20, 40, 60, and 80 mA.
+   - Set roatating speed of stage at desired value.
+   - Open shutter
+   - Press CYCLE/STOP to start the sputtering process. The system will proceed through its standard cycle.
+  - After sputtering note the final thickness for a thickness controlled process.
+  - Close shutter.
+==== When Done ====
+   - Switch off the system to automatically vent the chamber, which will take approximately 2 minutes.
+   - Lift the top plate and remove the glass cylinder.
+   - Set tilt of the stage to the horizontal position.
+   - Remove your sample.
+   - Clean inside of the glass cylinder with a tissue and ethanol to keep the glass clear.
+   - Replace glass cylinder and gently lower the top plate. Leave the system vented.
+===== Manual process for Cr-sputtering =====
+   - Select manual with the auto/manual button.
+   - Select timer for a timed process or MTM for a thickness controlled process.
+        - Timed process, Change sputtering time by holding PAUSE/TEST and pressing the timer SET buttons. Time can be set between 5 and 300 seconds.
+        - Thickness controlled process
+             - Turn on the thickness monitor (MTM 20)
+             - Set the correct density according to the target material by pressing the DENSITY button once and find the correct setting by scrolling with the scroll buttons.
+             - Set the correct tooling factor according to stage tilt by pressing the TOOLING button once and find the correct setting by scrolling with the scroll buttons.
+             - Set desired coating thickness by holding the TERMINATOR button for one second. The value for the thickness will show up and can be adjusted with the scroll buttons.
+   - Set sputter current to 80 mA by holding the SET mA button and pressing the timer SET buttons.
+   - Set rotating speed of stage at desired value.
+   - Open argon flush valve for 10 seconds, then close.
+   - Pump to 0,001 mbar
+   - Open argon flush valve for 3 seconds, then close
+   - Open leak valve.
+   - When pressure reaches better than 0,03 mbar set MTM-20 to ZERO for a thickness controlled process
+   - Press START/STOP to start sputtering
+   - Initially the discharge will be pink of colour. It will turn blue when the surface layer of chromium oxide is removed and chromium begins toe sputter.
+   - When plasma turns blue open the shutter
+   - After sputtering note the final thickness for a thickness controlled process.
+   - Close shutter.
 ====== Available Targets ======
-^ Target Material ^  Atomic Number  ^ Density in g/cm ^
+^  Target Material  ^  Atomic Number  ^  Density in g/cm³  ^
-| Pt/Pd (80/20) | 78/46 | 19,52 |
+|  Pt/Pd (80/20)  |  78/46  |  19,52  |
-| Cr | 24  | 7,19 |
+|  Cr  |  24  |  7,19  |
-| Ir | 77 | 22,56 |
+|  Ir  |  77  |  22,56  |
 ====== Deposition Rates ======
-^ Material ^  Date    ^ Sample ID ^ Etched Thickness ^ Etching time  ^ Recipe ^ Gas ^ Rate           ^
+^  Target Material  ^ Date  ^  User  ^  Tilt  ^   Current  ^  Time  ^  Measurement  ^  Result  ^  Rate  ^
-|    Al    | 20151007 | Timothy   |  9.9 nm   | 180 sec       |  10  | Ar, 3.0e-4 mbar  | 0.055 nm/sec |
+|  Pt/Pd (80/20)  |    |    |    |  40 mA  |    |    |    |    |
-|    Au    | 20120404 | Boltje    |  12.6 nm  | 30 sec        |  10  | Ar, 3.0e-4 mbar  | 0.420 nm/sec |
+|  Cr  |    |    |    |  80 mA  |    |    |    |    |
-|    Co    | 20120404 | Boltje    |  7.4 nm   | 30 sec        |  10  | Ar, 3.0 e-4 mbar | 0.247 nm/sec |
+|  Ir  |    |    |    |  40 mA  |    |    |    |    |