oxides_system
Differences
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| Both sides previous revisionPrevious revisionNext revision | Previous revision | ||
| oxides_system [2006/09/18 11:59] – vanya | oxides_system [2013/02/27 09:09] (current) – boltje | ||
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| ====Safety==== | ====Safety==== | ||
| Safety issues for yourself and for the system: | Safety issues for yourself and for the system: | ||
| - | * Before sputtering, make sure that all power supply cables are connected | + | * Before sputtering, make sure that **all power supply cables are connected** |
| - | * When pumping down, switch off cooling water for the sources and x-tal | + | * When **pumping down, switch off cooling water** for the sources and x-tal |
| * When starting, make sure the interlocks are wired correctly. **Do not plug 2 power supplies in the connector for the same cooling water loop!** | * When starting, make sure the interlocks are wired correctly. **Do not plug 2 power supplies in the connector for the same cooling water loop!** | ||
| - | * After that, check whether the flow meters | + | * After that, **check flow meters** and switch on cooling water for the sources and x-tal |
| - | ==== YBCO growth | + | [[oxide_YBCO]] |
| - | The most complex process is YBCO growth. That process is described here. | + | ==== Change Sample |
| === Switch off the pumps === | === Switch off the pumps === | ||
| Line 22: | Line 22: | ||
| === Open the chamber === | === Open the chamber === | ||
| - | - Vent the chamber | + | - Vent the chamber |
| + | - open N< | ||
| + | - turning the gas selector valve to N< | ||
| - Close both valves when the pressure is 8e2 Torr. | - Close both valves when the pressure is 8e2 Torr. | ||
| - Switch on the '' | - Switch on the '' | ||
| Line 31: | Line 33: | ||
| - Remove the heater shield | - Remove the heater shield | ||
| - Remove samples, clean sideplates in HNO< | - Remove samples, clean sideplates in HNO< | ||
| - | - Clean the heater surface | + | - Clean the heater surface |
| + | - with a razor | ||
| + | - 400 grit sandpaper | ||
| + | - 800 grit sandpaper | ||
| + | - Scotchbrite | ||
| + | - Clean with IPA. This step is crucial! | ||
| - Mount the sample with '' | - Mount the sample with '' | ||
| - | - Shine a halogene lamp on the substrate for 15 minutes | ||
| - Cut away glue around the substrate | - Cut away glue around the substrate | ||
| - Mount side plates, push them flush against the substrate using a cotton tip. | - Mount side plates, push them flush against the substrate using a cotton tip. | ||
| Line 55: | Line 61: | ||
| - Pump overnight | - Pump overnight | ||
| - | === Deposition === | + | |
| + | ==== Deposition | ||
| == Procedure start== | == Procedure start== | ||
| - | - Pressure | + | - Pressure |
| - | - Position heater between 2 sources, opposite to YBCO | + | - Position heater between 2 sources, opposite to Target |
| - | - Open N< | + | - Open **N< |
| - | - Open the O< | + | - Open the O< |
| - | - Open the YBCO shutter, keep other shutters closed (unless you make a multilayer of course) | + | - Adjust Turbo speed to regulate pressure |
| - | - Switch on the YBCO power supply, current regulation | + | - Open the Target |
| + | |||
| + | === RF === | ||
| + | - check cooling water | ||
| + | - Switch on power supply, power regulation | ||
| + | - Switch on matching power supply | ||
| + | - Check for no reflection when turning power up | ||
| + | - Let everything stabilize | ||
| + | |||
| + | === DC === | ||
| + | - Switch on the target | ||
| - Set the setpoint at 8 ma, display actual current and voltage | - Set the setpoint at 8 ma, display actual current and voltage | ||
| - | - Switch turbo to pressure control, setpoint 3.5 | + | - when pressure is right, switch power supply to on. The plasma should ignite. Get help if it doesn' |
| - | - Short after that, when the pressure is between 5e-2 and 1e-1 torr, switch power supply to on. The plasma should ignite. Get help if it doesn' | + | |
| - Let the pressure increase until the voltage gets below 350-380 V (the lower the better!) | - Let the pressure increase until the voltage gets below 350-380 V (the lower the better!) | ||
| - The voltage keeps decreasing, keep it constant at 350-380 V by increasing current (it is critical that you follow this rate given by the O< | - The voltage keeps decreasing, keep it constant at 350-380 V by increasing current (it is critical that you follow this rate given by the O< | ||
| - | - The turbo pump is at 0 Hz now and starts to accelerate | ||
| - | - At 100 Hz, set pressure setpoint to previous value from the logbook | ||
| - Keep increasing current, set current to 350 mA (never get above 390 V!) | - Keep increasing current, set current to 350 mA (never get above 390 V!) | ||
| - | - Use the Keithley to read O< | ||
| - | - Let everything stabilize | ||
| == Presputtering == | == Presputtering == | ||
| - You will see that the conditioning of the target takes quite a while, check that while conditioning the voltage goes down to about the previous value in the logbook. | - You will see that the conditioning of the target takes quite a while, check that while conditioning the voltage goes down to about the previous value in the logbook. | ||
| - Presputter for >1 hour | - Presputter for >1 hour | ||
| - | - Program the heater in the meanwhile. There is a recipe for YBCO. | + | - Program the heater in the meanwhile. |
| == Sputtering == | == Sputtering == | ||
| - | - Run the recipe | + | - Run temperature |
| - | - When the deposition substrate | + | - When temperature is reached, |
| - | - // | + | - Start a timer. |
| - Time the epitaxial growth process | - Time the epitaxial growth process | ||
| - | == Annealing | + | == After Sputtering |
| - | - Turn the substrate away and press '' | + | - Turn off power supply |
| - | - Turn off the power supply | + | - Cool down sample |
| - | - Set the chamber backfill selector to O< | + | |
| - | - Wait until the substrate reaches the annealing temperature + 10 degrees | + | |
| - | - Quickly close the gate valve and the O< | + | |
| - | - Close the gas valve under the chamber and exactly at the annealing temperature open the chamber backfill valve (you have to be quick here!) | + | |
| - | - Close the chamber backfill valve at 8e2 torr (reproduce this value!) | + | |
| - | - Set the chamber backfill gas selector to neutral | + | |
| === End === | === End === | ||
| + | - Close O< | ||
| - Let pump run for 20 minutes | - Let pump run for 20 minutes | ||
| - Close N< | - Close N< | ||
| - | - The Eurotherm control program takes the sample trough the annealing temperature profile | ||
| - Wait until the sample temperature is <50 C | - Wait until the sample temperature is <50 C | ||
| - Check whether **all** gas valves are closed | - Check whether **all** gas valves are closed | ||
| - | + | ==== Recipes ==== | |
| ====== Deposition rates ====== | ====== Deposition rates ====== | ||
| ^ Material ^ Date ^ Sample ID ^ Process parameters | ^ Material ^ Date ^ Sample ID ^ Process parameters | ||
| - | | ST0 | + | | |
| - | | | + | | |
| + | | LAO | 20121210 | ||
| + | |||
| + | |||
| + | ====== Tech stuff ====== | ||
| + | * Targets: 2 inch OD, 0.125 inch thick | ||
| + | * Backingcup: 53mm OD, 6.3mm thick | ||
| + | |||
| + | |||
oxides_system.1158580765.txt.gz · Last modified: 2012/07/11 14:37 (external edit)