Differences

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--- plasmalab_90 [2018/02/01 08:39] – [Etching rates] scholma
+++ plasmalab_90 [2018/06/08 07:06] (current) – [Description] scholma
@@ Line 11: / Line 11: @@
 The system has a loadlock and fully automated loading/unloading that allows use of toxic gases.
-Current configuration: Fluorine etcher, SF6, CF4, O2, Ar, N2.
+==== Current gas configuration ====
+  * SF6
+  * CF4
+  * O2
+  * Ar
+  * CHF3
+  * empty slot
 ====== Manual PlasmaLab 90+ ======
 The technical logbook can be found [[PlasmaLab 90+ logbook|here]]
@@ Line 93: / Line 99: @@
 ^ Material^  Date   ^ User ^ Thickness ^ Etching time  ^ Power ^ Pressure ^ Gasses [sccm] ^ Etch-Rate ^
 | MoGe    | 01.03.2012 |       | 19.4    | 30s           | 100W  | 75mtorr  | CF4(30) / Ar(10)        | 0.65 nm/s |
-| SiO2    | 15.01.2018 | Douwe | multiple| multiple      | 150W  | 30mtorr  | O2(3) / Ar(10) / CHF3(15) | 16nm/min (0.27nm/sec) |
+| SiO2    | 15Jan2018 | Douwe | multiple| multiple      | 150W  | 30mtorr  | O2(3) / Ar(10) / CHF3(15) | 16nm/min (0.27nm/sec) |
-| PMMA 950K  | 15.01.2018 | Douwe | multiple| multiple      | 150W  | 30mtorr  | O2(3) / Ar(10) / CHF3(15) | 74nm/min (1.23nm/sec) |
+| PMMA 950K  | 15Jan2018 | Douwe | multiple| multiple      | 150W  | 30mtorr  | O2(3) / Ar(10) / CHF3(15) | 74nm/min (1.23nm/sec) |
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 To ash PMMA/MMA double layer resist and/or clean your SiO2 chip from any other organic crap, use 20 min in 30Torr O2 plasma (30sccm flow, 16'C sample temp.)