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--- resist_and_e-beam_recipes [2018/05/16 11:05] – [Ma-N 24xx] scholma
+++ resist_and_e-beam_recipes [2018/11/19 08:32] (current) – [Electra92] scholma
@@ Line 19: / Line 19: @@
 ==== PMMA ====
-Do not heavily overexpose, PMMA will become negative at 20x overexposure! 80 uC/m<sup>2</sup> is a good starting value for the sensitivity. The spin curve is plotted below. The datasheet can be found here.
+Do not heavily overexpose, PMMA will become negative at 20x overexposure! 80 µC/m<sup>2</sup> is a good starting value for the sensitivity. The spin curve is plotted below. The datasheet can be found here.
 The process for 950k PMMA A4 (average chain mass is 950000 <sup>12</sup>C atoms, 4 mass % solid solved in Anisole) is as follows:
@@ Line 36: / Line 36: @@
   - Dispense, cover the substrate fully, optionally put cover on spinner, push ''start''
   - Immediately put leftover PMMA back in bottle, throw away tip and close bottle (keep bottle open time to a minimum because solvent evaporation will change viscosity and therefore spin curve)
-  - Bake, 160 C, 30 min (process is tolerant for changes in this time)
+  - Bake, 160 °C, 30 min (process is tolerant for changes in this time)
   - Clean spinner bowl and chuck in the meanwhile
-  - Expose, 80 uC/cm<sup>2</sup>
+  - Expose, 80 µC/cm<sup>2</sup>
   - Develop (accurately) 35 sec in PMMA developer\\
 High contrast developer (for high resolution): MIBK:IPA 1:3. \\
@@ Line 74: / Line 74: @@
 PMGI has the property that it can be easily combined chemically with PMMA type resists without mixing (photoresists typically do not allow this) but that the development is very different: it is developed in a typical alkali photoresist developer. PMGI is sensitive and has low contrast, making it very suited as a large-undercut resist. The PMMA developer does not develop the PMGI and the PMGI developer does not develop the PMMA! This allows you to inspect the sample and tune the undercut by under/over developing the PMGI.
-PMGI is solved in cyclopentanone and THFA. FIXME: i'm not sure about the cyclopentanone.
+PMGI is solved in cyclopentanone and THFA. FIXME: i'm not sure about the cyclopentanone.\\
 Read the MSDS's before starting!
@@ Line 83: / Line 83: @@
   - Clean substrate with IPA, 1 min ultra sound (use low glass)
   - Dry, N<sub>2</sub>
-  - Bake, 120 C, 2 min
+  - Bake, 120 °C, 2 min
   - Cool substrate
-  - Put hotplate at 190 C
+  - Put hotplate at 190 °C
   - Take a clean pipet tip
   - Open PMGI bottle, filter if necessary
@@ Line 92: / Line 92: @@
   - Dispense, cover the substrate fully, optionally put cover on spinner, push ''start''
   - Immediately put leftover PMGI back in bottle, throw away tip and close bottle (keep bottle open time to a minimum because solvent evaporation will change viscosity and therefore spin curve)
-  - Bake, 190 C, 60 min
+  - Bake, 190 °C, 60 min
   - Clean spinner bowl and chuck in the meanwhile
-  - Expose, 160 uC/cm<sup>2</sup>
+  - Expose, 160 µC/cm<sup>2</sup>
   - Develop 3 min in PMGI 101 developer
@@ Line 158: / Line 158: @@
   - MaN1410 is removed extremely well with acetone
   - If your resist has become resistant to any solvent, 20 min oxygen etch in Plasmalab90 does the job nicely
+----
+====== Recipes summary ======
+The parameters in the following recipes are used by most users. The recipes can be used as a guideline, but should be checked for your specific process. \\
+Some resists can be used for e-beam and photolithography.
+===== Positive Resist recipes =====
+==== AR-P 617.03 (Copolymer) ====
+  * spin at 4000rpm
+  * bake at 200°C for 10 min
+==== AR-P 642.06 ====
+  * spin at 4000 rpm
+  * bake at 150 °C for 3 min
+==== AR-P 662.04 ====
+==== AR-P 662.06 ====
+  * spin at 4000rpm
+  * bake at 150ºC for 3 min
+  * e-beam 30kV, 180 µC/cm²
+  * develop MIBK/IPA (1:3) 30 sec
+  * stop IPA, 10 sec
+==== AR-P 672.045 (PMMA 950K) ====
+  * spin at 4000rpm
+  * bake at 180ºC for 2 min
+  * e-beam 30kV, 300 µC/cm²
+  * develop MIBK/IPA (1:3) 30s
+  * stop IPA 30s
+==== AR-P 6200.09 (CSAR 62) ====
+  * Bake 150 °C, 60sec hotplate
+  * e-beam exposure 65 µC/cm²
+  * develop AR 600-546 60 sec
+  * stopper AR 600-60 30sec , or IPA
+  * remover: AR 600-71, AR-300-76
+===== Negative Resist recipes =====
+==== AR-N 7500.08  ====
+==== AR-N 7500.18 ====
+==== AR-N 7700.08 ====
+  * spin at 4000rpm
+  * bake at 85ºC for 1 min
+  * e-beam 20kV at least 24 µC/cm²
+  * prebake 100ºC for 2 min
+  * develop AR300-47 30s
+  * stop demiwater 30s
+==== AR-N 7700.18 ====
+===== Other =====
+==== Conductive Polymer PEDOT:PSS ====
+  * spin at 4000 rpm
+  * let it dry a few minutes, typically you need three layers
+  * rinse with water before developing
+  *
+==== Electra92 ====
+  * spin at 4000 rpm
+  * one layer should be enough
+  * bake at 105 °C for  5min on hot plate
+  * rinse with water before developing
+===== Optical Resists ======
+^  Resist   ^  Spincoater     ^  Baking         ^  Developing  ^  Remarks  ^
+|  AZ5214E  |  4000/6000rpm   |  90 C, 2.5 min  |  50% AZ312MIF + 50% H<sub>2</sub>O, 40 s  |  -  |
+|  HPR205   |  4000/6000rpm   |  90 C, 2.5 min  |  50% AZ312MIF + 50% H<sub>2</sub>O, 40 s  |  -  |
+|  MaN1410  |  3000rpm,30-45s |  90 C, at least 90s  |  MaD533, 15 s  |  negative photoresist  |
+|  MaP1205  |  4000/6000rpm   |  100 C, 30 s  |  90% MaD532 + 10% H<sub>2</sub>O, 30 s  |  100% MaD532 can also be used, takes 10-15 s  |