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--- resist_and_e-beam_recipes [2018/05/16 11:25] – [PMMA] scholma
+++ resist_and_e-beam_recipes [2018/11/19 08:32] (current) – [Electra92] scholma
@@ Line 158: / Line 158: @@
   - MaN1410 is removed extremely well with acetone
   - If your resist has become resistant to any solvent, 20 min oxygen etch in Plasmalab90 does the job nicely
+----
+====== Recipes summary ======
+The parameters in the following recipes are used by most users. The recipes can be used as a guideline, but should be checked for your specific process. \\
+Some resists can be used for e-beam and photolithography.
+===== Positive Resist recipes =====
+==== AR-P 617.03 (Copolymer) ====
+  * spin at 4000rpm
+  * bake at 200°C for 10 min
+==== AR-P 642.06 ====
+  * spin at 4000 rpm
+  * bake at 150 °C for 3 min
+==== AR-P 662.04 ====
+==== AR-P 662.06 ====
+  * spin at 4000rpm
+  * bake at 150ºC for 3 min
+  * e-beam 30kV, 180 µC/cm²
+  * develop MIBK/IPA (1:3) 30 sec
+  * stop IPA, 10 sec
+==== AR-P 672.045 (PMMA 950K) ====
+  * spin at 4000rpm
+  * bake at 180ºC for 2 min
+  * e-beam 30kV, 300 µC/cm²
+  * develop MIBK/IPA (1:3) 30s
+  * stop IPA 30s
+==== AR-P 6200.09 (CSAR 62) ====
+  * Bake 150 °C, 60sec hotplate
+  * e-beam exposure 65 µC/cm²
+  * develop AR 600-546 60 sec
+  * stopper AR 600-60 30sec , or IPA
+  * remover: AR 600-71, AR-300-76
+===== Negative Resist recipes =====
+==== AR-N 7500.08  ====
+==== AR-N 7500.18 ====
+==== AR-N 7700.08 ====
+  * spin at 4000rpm
+  * bake at 85ºC for 1 min
+  * e-beam 20kV at least 24 µC/cm²
+  * prebake 100ºC for 2 min
+  * develop AR300-47 30s
+  * stop demiwater 30s
+==== AR-N 7700.18 ====
+===== Other =====
+==== Conductive Polymer PEDOT:PSS ====
+  * spin at 4000 rpm
+  * let it dry a few minutes, typically you need three layers
+  * rinse with water before developing
+  *
+==== Electra92 ====
+  * spin at 4000 rpm
+  * one layer should be enough
+  * bake at 105 °C for  5min on hot plate
+  * rinse with water before developing
+===== Optical Resists ======
+^  Resist   ^  Spincoater     ^  Baking         ^  Developing  ^  Remarks  ^
+|  AZ5214E  |  4000/6000rpm   |  90 C, 2.5 min  |  50% AZ312MIF + 50% H<sub>2</sub>O, 40 s  |  -  |
+|  HPR205   |  4000/6000rpm   |  90 C, 2.5 min  |  50% AZ312MIF + 50% H<sub>2</sub>O, 40 s  |  -  |
+|  MaN1410  |  3000rpm,30-45s |  90 C, at least 90s  |  MaD533, 15 s  |  negative photoresist  |
+|  MaP1205  |  4000/6000rpm   |  100 C, 30 s  |  90% MaD532 + 10% H<sub>2</sub>O, 30 s  |  100% MaD532 can also be used, takes 10-15 s  |