Differences

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--- uhv_system [2025/06/16 16:00] – [Deposition rates] rog
+++ uhv_system [2025/10/29 16:07] (current) – doorn
@@ Line 1: / Line 1: @@
 ====== Description ======
 The UHV system is a magnetron sputtering system with a background pressure around 10e-10 mbar and a deposition pressure of 1e-3 to 1e-2 mbar. It is equipped with a loadlock that holds a sample garage with 7 sample spaces. One sample space can hold a 15x15mm wafer. The substrate is transferred to and from the chamber using two linear manipulators and a wobble stick. Most targets in the chamber are at an angle with respect to the sample, and the sample can be tilted towards 3 out of 4 magnetron sources. The system can be used with both DC and RF power supplies (DC being standard). The sputtering gas is Ar; the loadlock is also connected to N<sub>2</sub> and O<sub>2</sub> for oxidation. The substrate stays relatively cool and cannot be cooled or heated away from room temperature.
+The UHV system is maintained by the nanolab and the Lahabi Lab. Contact the Lahabi Lab if you are interested in using the system. Target changes are only performed sporadically, to maintain excellent vacuum conditions.
 ======The Vacuum System======
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   - Always pump down the loadlock after use (as described above).
+===== Bake-out: =====
+To achieve a high-quality vacuum after the chamber has been vented, a bake-out is required. A good bake-out should take at least 48 hours to properly heat the whole system.
+  * Turn on the cooling water
+  * Disconnect the HV cables from the targets
+  * Remove the Ar gauge
+  * Cover the viewports with aluminium foil
+  * Place all the panels to fully cover the whole machine
+The blue cables for the vacuum gauges do not need to be covered. To start the bake-out, flip the breaker switch up and turn the black knob to the left. This permanently turns on the heaters (will go between the two setpoints, should be 80 and 100 C). Turning it to the right will use a timer but this was found to be iffy. After the bake-out make sure to reattach all cables and the Ar gauge. Please be aware that there is no interlock preventing you from turning on the heaters without the cooling water. The cooling water must be on during the bake-out!
 ====== Deposition rates ======
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 | Nb | 4.0e-3 mbar, 200 mA, 20 min, 45 deg  | 61.58 nm  |  3.08 nm/min | 0.0513 nm/s |
 | Pt | 4.0e-3 mbar, 150 mA, 10 min, 45 deg  | 122.9 nm  | 12.29 nm/min | 0.205 nm/s  |
+| Pt | 4.0e-3 mbar, 100 mA, 10 min          | 111.37 nm | 11.14 nm/min | 0.1856 nm/s |
+| Pt | 4.0e-3 mbar, 120 mA, 10 min          | 138.53 nm | 13.85 nm/min | 0.2309 nm/s |
+| Pt | 4.0e-3 mbar, 100 mA, 10 min, 45 deg  | 87.8 nm   | 8.78 nm/min  | 0.1463 nm/s |
 Definition: ''sputtering angle'' is the angle between substrate and target. If this angle is not zero, it should be noted here. Note that for sources 1 and 3 the substrate needs to be tilted 45 degrees to have a zero ''sputtering angle''.