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z-400 [2017/03/27 12:47] – [Deposition rates] nelkz-400 [2025/02/11 08:01] (current) – boltje
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 ====== Description ====== ====== Description ======
 The Leybold Z-400 is an RF diode sputtering system equipped with 3 3" targets. It has a The Leybold Z-400 is an RF diode sputtering system equipped with 3 3" targets. It has a
-background pressure of 1e-6 mbar and a deposition pressure of ca. 3e-2 - 8e-2 mbar.+background pressure of 1e-5 mbar and a deposition pressure of ca. 5e-3 - 8e-2 mbar.
 The 2 substrate tables are water cooled and can hold substrates up to 3". The 2 substrate tables are water cooled and can hold substrates up to 3".
-The system is equipped with 3-channel gas blending for Ar, N<sub>2</sub> and O<sub>2</sub>. +The system is equipped with 3-channel gas blending for Ar, N<sub>2</sub> and O<sub>2</sub>. The substrate
-H<sub>2</sub>S can also be mixed in. The turbo pumping system is automated. The substrate+
 tables can be RF-biassed for RF bias sputtering or ion etching. tables can be RF-biassed for RF bias sputtering or ion etching.
  
 ====== Manual ====== ====== Manual ======
 **WARNING! there is only 1 way to damage the Z-400, that is by changing the HV target selector while HV is ''on''. This will destroy the klystron tube and literally explode the capacitors surrounding it resulting in many months of downtime due to the very long delivery time of these expensive components.**  **WARNING! there is only 1 way to damage the Z-400, that is by changing the HV target selector while HV is ''on''. This will destroy the klystron tube and literally explode the capacitors surrounding it resulting in many months of downtime due to the very long delivery time of these expensive components.** 
- 
-Contact [[marcel hesselberth|me]] if the target you need is not in the system. 
  
 ===== Switch off the pumps ===== ===== Switch off the pumps =====
-  - Check that the mass flow controller valve is closed (indicated by Close in the software). +  - Check that the mass flow controller valve is closed (indicated by CloseMFC in the software) 
-  - Close the green valve while holding the tubing (until the arrow points in the middle of the red marker). It needs to be tight, the valve has a end stop. +  - Close the green valve while holding the tubing (until the arrow points in the middle of the red marker). It needs to be tight, the valve has a end stop 
-  - Verify that cooling water is switched off (blue shower button is not illuminated). +  - Target cooling water should be turned off 
-  - Check that the HV is off (two on/off buttons) and the power supply is off (red turning knob). +  - Check that the HV is off (off button on the power supply) and the power supply is off (red turning knob) 
-  - Switch off turbo and rotary pump (1 switch).+  - Switch off turbo and rotary pump with the 'vacuum switch'
  
 ===== Vent the chamber ===== ===== Vent the chamber =====
-  - Decelerate the turbo by slowly venting to 5 mbar using the needle valve and closing it at 5 mbar. **WAIT 5 MINUTES**.+  - Decelerate the turbo by slowly venting to 5 mbar using the needle valve and closing it at 5 mbar.  
 +  - **WAIT 5 MINUTES**.
   - Now, vent the chamber completely to atmospheric pressure and close the vent valve.   - Now, vent the chamber completely to atmospheric pressure and close the vent valve.
   - Open the flip-top lid.   - Open the flip-top lid.
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 ===== Pump down ===== ===== Pump down =====
   - Close the flip-top lid.   - Close the flip-top lid.
-  - Open the rotary pump valve ('Vor-Vakuum' button).+  - Start vacuum
   - When the pressure drops below 1e-2 mbar, open the green valve (use both hands) to keep the gas line clean.   - When the pressure drops below 1e-2 mbar, open the green valve (use both hands) to keep the gas line clean.
-  - Pump down to the desired pressure (but always <1e-5 mbar). +  - Pump down to base pressure <8e-5mbar (pressure interlock ensures you cannot start power supply if base pressure wasn't achieved)
 ===== Sputter ===== ===== Sputter =====
   - Note background pressure in logbook.   - Note background pressure in logbook.
-  - **Switch on cooling water (blue button)**. +  - Switch on target cooling water 
-  - **Manual Process** +  - Sputtering process 
-       - Select target with HV target selector knob (left of the chamber).+       - Select target with HV target selector knob (left of the chamber) 
 +       - **never operate HV target selector with HV on** 
        - Switch on power supply (red turning knob). It takes 2 minutes for the RF generator to warm up.        - Switch on power supply (red turning knob). It takes 2 minutes for the RF generator to warm up.
-       - Check the timings and positions for the (pre) sputtering, **note this in the logbook**.+       - Check the timings and positions for the (pre) sputtering, note this in the logbook.
        - Set the target to the pre sputter position.        - Set the target to the pre sputter position.
-       - Set the Argon flow setpoint (using the software, usually around 30-50 sccm) and set the MFC valve to 'Normal'.+       - Set the Argon flow setpoint (using the software, usually around 30-50 sccm)
        - Check that the desired pressure is reached (typically 5E-3 mbar), if not adjust the flow accordingly.        - Check that the desired pressure is reached (typically 5E-3 mbar), if not adjust the flow accordingly.
-       - Set the DC voltage meter to 1 kV full scale (right display).+       - Set the DC voltage meter scale to 1 kV (right display).
        - Turn the HV setpoint to zero (black knob on power supply).        - Turn the HV setpoint to zero (black knob on power supply).
        - Turn HV on (two on/off buttons).        - Turn HV on (two on/off buttons).
        - Set 500 V RF (2nd display from the left, 5 kV scale).        - Set 500 V RF (2nd display from the left, 5 kV scale).
-       - Increase the flow setpoint temporarily to 75 sscm and check that the pressure rises.+       - Increase the flow setpoint temporarily to 70 sscm and check that the pressure rises.
        - Wait until the plasma ignites (right display shows non-zero value).        - Wait until the plasma ignites (right display shows non-zero value).
-       - **Quickly** check that the ignited target is at pre sputter position (look through window, purple glow at front position).  +       - check that the ignited target is at pre sputter position (look through window, purple glow at front position).  
-       - Next set the flow to the original value and check that the pressure stabilises at 5E-3 mbar.+       - Next set the flow to the original value and check that the pressure stabilizes at 5E-3 mbar.
        - Set the DC potential to the desired value (typically 1 kV).        - Set the DC potential to the desired value (typically 1 kV).
        - With the pressure and the plasma stable, start your process (pre sputtering, sputtering with the correct timings and positions).        - With the pressure and the plasma stable, start your process (pre sputtering, sputtering with the correct timings and positions).
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        - Switch off HV (red ''HV off'' button).        - Switch off HV (red ''HV off'' button).
        - If you want to sputter a different material now, redo the procedure from step I.        - If you want to sputter a different material now, redo the procedure from step I.
-  - **Automated Process** (currently not implemented) 
-       - ... 
-       - ... 
-       - ... 
  
 ===== End ===== ===== End =====
-  - Close the MFC ('Close' button in software, read dialog, press OK).+  - Close the MFC ('CloseMFC' button in software).
   - Switch off HV power supply (left red turning knob).   - Switch off HV power supply (left red turning knob).
-  - Switch off cooling water. +  - Switch off target cooling water. 
-  - Check that the mass flow controller valve is closed (indicated in the software by 'Vlv: C'). +  - Close green valve (hold the gasline with one hand). 
-  - Close green valve (use both hands). +  - Let a cooled substrates warm up before venting the chamber. 
-  - Let the cooled substrates warm up before venting the chamber with N<sub>2</sub> (see start of the manual).+  - vent the chamber (see above) 
 +  - remove sample and clean sputterplate if you used silverpaint to glue the sample 
 +  - pump down (make sure to open the green valve below 1e-2mbar before leaving the lab)
  
 ====== Target Materials ====== ====== Target Materials ======
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 </columns> </columns>
  
-===== Deposition rates =====+----
  
-These are the most recent deposition rates, visit [[Z-400 Deposition Rates]] for the full list. From March 2014 onwards please use the pressure as the primary process parameter instead of the flow!+====== Recipes & Instructions ======
  
-^ Material ^ Date ^ User ^ Pressure ^ DC Potential ^ Flow ^ Time ^ Measurement ^ Result ^ Rate ^ Notes ^ +[[Z-400 Flat Au on MoGe]]
-| Cr | 20141111 | Boltje | 3E-5 mbar | 1 kV | 48 sccm | 80 s | X-Ray | 12.8 nm | 9.6 nm/min | | +
-| Cu<sub>99.5</sub>Bi<sub>0.5</sub> | 20150429 | Boltje | 3E-5 mbar | 1 kV | 50 sccm | 120 s | X-Ray | 22.0 nm | 11.0 nm/min | | +
-| Ni | 20140325 | Boltje | 3E-5 mbar | 1 kV | xx sccm | 5 min | X-Ray | 43.5 nm | 8.70 nm/min | | +
-| SiO<sub>2</sub> | 20131114 | Boltje | 5E-3 mbar | 1 kV | 38 sccm | 5 min | X-Ray | 15.4 nm | 3.08 nm/min | | +
-| Si | 20150422 | Boltje | 5E-3 mbar | 1 kV | 49 sccm | 3 min | X-Ray | 23.0 nm | 7.66 nm/min | | +
-| Al | 20151007 | Timothy | 4.9E-3 mbar | 1kV | 49 sccm | 3 min | X-Ray | 30.0 nm | 10.0 nm/min | | +
-| Ti | 20160428 | Annette | 5.1E-3 mbar | 1kV | 49 sccm | 10 min|profilometer|30 nm| 3.0 nm/min  | | +
-| Py | 20170220 | Casper | 4.8E-3 mbar | 1kV | 49 sccm | xx min| X-ray |585 nm| 7.8 nm/min  | | +
-|MoGe| 20170327 | Jean-Pierre | 4.9E-3 mbar | 1kV | 49 sccm | 25 min| Profilometer |137 nm| 5.5 nm/min  | |+
  
 +----
  
-Old rates: 
-^ Material ^  Date     ^ User ^ Process parameters                    ^ Measurement  ^ Result ^ Rate                ^  
-| Al       | 20120522  | Boltje    | 50 sccm Ar, 1kV, 148 s           | X-ray          | 22.5 nm   | 9.1 nm/min       |   
-| Al<sub>2</sub>O<sub>3</sub>    | 20120606  | Boltje    | 60 sccm Ar, 10% O<sub>2</sub>, 1kV, 5 min         | X-ray          | 9.2 nm | 1.8 nm/min      | 
-| Ag       | 20111014  | Boltje    | 50 sccm Ar, 1kV, 2min            | X-ray          | 38.2 nm | 19.1  nm/min     | 
-| Au       | 20120404  | Boltje    | 50 sccm Ar, 1kV, 3min            | X-ray          | 45.6 nm | 15.2  nm/min     | 
-| Co       | 20111207  | Boltje    | 50 sccm Ar, 1kV, 545sec          | X-ray          | 63.1 nm | 6.95 nm/min       | 
-| Cr       | 20090709  | Boltje    | 25% Ar, 1kV, 4min                | X-ray          | 30.0 nm   | 7.5 nm/min       | 
-| Cu       | 20120606  | Boltje    | 50 sccm Ar, 1kV, 3 min           | X-ray          | 37.6 nm | 12.5 nm/min      | 
-| Cu-etch  | 20120606  | Boltje    | 50 sccm Ar, 60W, 3 min, (37.6-35.5 nm)    | X-ray          | 2.1 nm  | 0.7 nm/min      | 
-| Co       | 20120404  | Boltje    | 50 sccm Ar, 1kV, 10min           | X-ray          | 68.0 nm | 6.8 nm/min      | 
-| Fe       | 20100407  | Boltje    | 25% Ar, 1kV, 4min                | X-ray          | 22.0 nm | 5.5  nm/min      | 
-| Fe       | 201204..  | Boltje    | 25% Ar, 1kV, 10min               | X-ray          | .... nm | ...  nm/min      | 
-| MoGe     | 15042011  | Boltje    | 50 sccm Ar, 1kV, 10min           | X-ray          | 55.3 nm | 5.5 nm/min    | 
-| MoGe     | 2012....  | Boltje    | 50 sccm Ar, 1kV, 10min           | X-ray          | .... nm | ... nm/min    | 
-| MoGe*     | 16082011  | Boltje    | 50 sccm Ar, 1kV, 10min          | X-ray          | 51.5 nm | 5.2 nm/min    | 
-|Nb<sub>65</sub>Ge<sub>35</sub>    | 2005   | Bas v Leewuwen   | 25% Ar, 1kV                                 | X-ray | -     | 4.89 nm/min | 
-| [[NbN]]  | 20111212  | Boltje    | 1.0 kV, 18% Ar, 10% N2, x min, no blend      | X-ray   | 71.3 nm         | 3.56 nm/min    | 
-| Ni       | 20110114  | Boltje    | 50 sccm Ar, 1kV, 9min                             | X-ray   | 58.8 nm          | 6.5 nm/min    | 
-| NiGd     | 20051024  | ?         | 25% Ar, 1kV                                       | X-ray   | 67.5 nm          | 6.8 nm/min    | 
-| Pt       | 20110307  | Boltje    | 50 sccm Ar, 0.5kV, 10 min                         | X-ray   | 15.6 nm          | 1.56 nm/min   | 
-| Pt       | 20120612  | Boltje    | 50 sccm Ar, 1kV, 10 min                           | X-ray   | 67.9 nm          | 6.8 nm/min   | 
-| Si<sub>3</sub>N<sub>4</sub>    | 20120522  | Boltje    | 50 sccm Ar, 1kV, 469 s                            | X-ray   | 36.0 nm          | 4.6 nm/min   | 
-| W        | 20060116  | Vincent   | 25% Ar, 1kV                                       | X-ray   | 38.5 nm          | 3.9 nm/min    | 
  
-* repaired target, with a few new Ge pieces+====== Miscellaneous ====== 
 +The digital version of the log sheet:  {{:z400logbook.pdf|}}
  
-===== Recipes & Instructions ===== 
  
-[[Z-400 Flat Au on MoGe]]+----
  
 +====== Deposition rates Z406 ======
  
 +^ Material ^ Date ^ User ^ Pressure ^ DC Potential ^ Flow ^ Time ^ Measurement ^ Result ^ Rate ^ Notes ^
 +| Al        | 20120522  | Boltje    |    |1kV |50 sccm Ar | 148 s | X-ray        | 22.5 nm   | 9.1 nm/min        |  |
 +| Al        | 20080514  | Jorina    |   |1kV |25% Ar | 10min    | X-ray          | 80 nm    | 8 nm/min          |  |
 +| Al        | 20100520  | Boltje    | 4e-3 mbar |500V |~25% Ar | 10 min | X-ray          | 25.6 nm | 2.6 nm/min        |  |
 +| Al        | 20110606  | Boltje    | |1kV |50 sccm Ar | 4 min | X-ray         | 38 nm    | 9.5 nm/min        | |
 +| Al | 20151007 | Timothy | 4.9e-3 mbar | 1kV | 49 sccm | 3 min | X-Ray | 30.0 nm | 10.0 nm/min | |
 +| Al<sub>2</sub>O<sub>3</sub>    | 20120606  | Boltje    |  |1kV |60 sccm Ar, 10% O2 |5 min      | X-ray          | 9.2 nm | 1.8 nm/min    | |
 +| Al<sub>2</sub>O<sub>3</sub>      | 20050127  | Gertjan    |  |1kV |25% Ar |2min | RBS    | 8 nm     | 4 nm/min    | |
 +| Al<sub>2</sub>O<sub>3</sub>      | 20100519  | Boltje    | 4e-3 mbar |1kV |~25% Ar | 15 min | X-ray  | 32.4 nm | 2.2 nm/min | |
 +| Al<sub>2</sub>O<sub>3</sub>    | 20111028  | Boltje    | |0.5 kV |50 sccm Ar |15min | X-ray          | 10.7 nm | 0.71 nm/min      | |
 +| Ag        | 20111014  | Boltje    |         |1kV |50 sccm Ar |2min | X-ray          | 38.2 nm | 19.1 nm/min      | |
 +| Au        | 20120404  | Boltje    |         |1kV |50 sccm Ar |3min  | X-ray          | 45.6 nm | 15.2 nm/min      | |
 +| Au        | 20100330  | Boltje    |             |1kV |~25 Ar |3min     | X-ray          | 54.3 nm | 18.1 nm/min      | |
 +| Au        | 20110202  | Boltje    |            |1kV |50 sccm Ar |2min | X-ray          | 29.1 nm | 14.6 nm/min      | |
 +| Au        | 20111206 | Boltje    |          |1kV |50 sccm Ar |Xmin | X-ray          | 51.4 nm | 15.0 nm/min    | |
 +| Au        | 20120402  | Boltje    |        |1kV |50 sccm Ar |80sec      | X-ray          | 19.2 nm | 14.4  nm/min      | |
 +| Co        | 20111207  | Boltje    |      |1kV |50 sccm Ar |545sec    | X-ray          | 63.1 nm | 6.95 nm/min       | |
 +| Co        | 20100331  | Boltje    | |1kV |25% Ar |3min       | X-ray          | 16.5 nm | 5.5 nm/min        | |
 +| Co        | 20110104  | Boltje    |          |1kV |50 sccm Ar |10min    | X-ray          | 63.9 nm | 6.4 nm/min        | |
 +| Cr        | 20090709  | Boltje    | |1kV |25% Ar |4min      | X-ray          | 30.0 nm   | 7.5 nm/min        | |
 +| Cr | 20141111 | Boltje | 3e-5 mbar |1kV |48 sccm |80 s | X-Ray | 12.8 nm | 9.6 nm/min | |
 +| Cu      | 20120606  | Boltje    | |1kV |50 sccm Ar |3min     | X-ray          | 37.6 nm | 12.5 nm/min      | |
 +| Cu        | 20100203  | Boltje    | |1kV |25% Ar |5min       | X-ray          | 63 nm    | 12.6 nm/min      | |
 +| Cu        | 20110111  | Boltje    |      |1kV |50 sccm Ar |5min     | X-ray          | 57.6 nm | 11.5 nm/min      | |
 +| Cu        | 20111206  | Boltje    |    |1kV |50 sccm Ar |5min     | X-ray          | 58.2 nm | 13.4 nm/min      | |
 +| Cu        | 20120404  | Boltje    |      |1kV |50 sccm Ar |5min | X-ray          | 51.5 nm | 10.3 nm/min      | |
 +| Cu-etch  | 20120606  | Boltje    | | |50 sccm Ar |3 min    | X-ray          | 2.1 nm  | 0.7 nm/min      |60W |
 +| Cu<sub>99.5</sub>Bi<sub>0.5</sub> | 20150429 | Boltje | 3e-5 mbar |1kV |50 sccm Ar |120s | X-Ray | 22.0 nm | 11.0 nm/min | |
 +| Co        | 20120404  | Boltje    | |1kV |50 sccm Ar |10min      | X-ray          | 68.0 nm | 6.8 nm/min      | |
 +| Fe        | 20100407  | Boltje    | |1kV |25% Ar |4min       | X-ray          | 22.0 nm | 5.5  nm/min      | |
 +| MoGe      | 2007      | Edoardo    | |1kV |25% Ar |15mins*  | X-ray    | 84.2 nm   | 5.6 nm/min    |* no pauses, silver paint| 
 +| MoGe      | 20080204  | Ivan & Edo | |1kV |25% Ar | 18 mins* | X-ray    | 86 nm     | 4.8 nm/min    |*pauses (1min)|
 +| MoGe      | 20110415  | Boltje    |          |1kV |50 sccm Ar | 10min     | X-ray          | 55.3 nm | 5.5 nm/min    | |
 +| MoGe*      | 20110816  | Boltje    |          |1kV |50 sccm Ar |10min      | X-ray          | 51.5 nm | 5.2 nm/min    | |
 +|MoGe | 20170327 | Jean-Pierre | 4.9e-3 mbar |1kV |49 sccm |25 min |Profilometer |137 nm | 5.5 nm/min  | |
 +|Nb<sub>65</sub>Ge<sub>35</sub>    | 2005    | Bas v Leewuwen| |1kV |25% Ar | -    | X-ray | -      | 4.89 nm/min | |
 +|Nb<sub>65</sub>Ge<sub>35</sub>    | 2004    | Tibi          |<3e-6 mbar |1kV |25% Ar | 6 min  | X-ray | 28 nm | 4.67 nm/min | |
 +| [[NbN]]  | 20111212  | Boltje    | |1.0 kV |18% Ar, 10% N2* | x min | X-ray    | 71.3 nm   | 3.56 nm/min    |* no blend|
 +| [[NbN]]  | 20050126  | Gertjan    | |1.7 kV |18% Ar, 10% N2* | 8 min | RBS/X-ray      | 60/75nm | 7.5-9 nm/min  |* blend |
 +| [[NbN]]  | 20050124  | Olaf      | |1.0 kV |18% Ar, 10% N2* | 1356s | X-ray          | 49.5 nm | 2.2 nm/min    |* no blend|
 +| [[NbN]]  | 20080310  | Jorina    | |1.0 kV |18% Ar, 10% N2* | 22min 42s | X-ray    | 55.15 nm  | 2.4 nm/min    |* no blend|
 +| Ni        | 20110114  | Boltje    |         |1kV |50 sccm Ar | 9min | X-ray    | 58.8 nm | 6.5 nm/min    | |
 +| Ni | 20140325 | Boltje |3e-5 mbar |1 kV |xx sccm | 5 min | X-Ray | 43.5 nm | 8.70 nm/min | |
 +| NiGd      | 20051024  | ?          | |1kV |25% Ar |           | X-ray    | 67.5 nm   | 6.8 nm/min    | |
 +| Pt        | 20110307  | Boltje    | |0.5kV |50 sccm Ar | 10 min    | X-ray    | 15.6 nm   | 1.56 nm/min    | |
 +| Pt        | 20120612  | Boltje    |          |1kV |50 sccm Ar | 10 min    | X-ray    | 67.9 nm   | 6.8 nm/min    | |
 +| Pt        | 20061113  | Chris      | |0.5kV |25% Ar |2mins      | X-ray    | 5.0 nm    | 2.5 nm/min    | |
 +| Py        | 20161223 | Mechielsen |          |1kV |50 sccm Ar | | AFM            | | 7.9  nm/min      | |
 +| Py | 20170220 | Casper | 4.8e-3 mbar |1kV |49 sccm | xx min | X-ray | 585 nm | 7.8 nm/min  | |
 +| Si | 20150422 | Boltje | 5e-3 mbar |1 kV |49 sccm | 3 min | X-Ray | 23.0 nm | 7.66 nm/min | |
 +| Si<sub>3</sub>N<sub>4</sub>    | 20120522  | Boltje    |          |1kV |50 sccm Ar | 469 s     | X-ray    | 36.0 nm   | 4.6 nm/min    | |
 +| Si3N4    | 20110609  | Boltje    |         |1kV |50 sccm Ar | 8 min     | X-ray    | 31.8 nm   | 4.0 nm/min    | |
 +| Si3N4    | 20120522  | Boltje    |          |1kV |50 sccm Ar | 469 s     | X-ray    | 36.0 nm  | 4.6 nm/min    | |
 +| SiO<sub>2</sub> | 20131114 | Boltje | 5e-3 mbar |1kV |38 sccm | 5 min | X-Ray | 15.4 nm | 3.08 nm/min | |
 +| Ti | 20160428 | Annette | 5.1e-3 mbar |1kV |49 sccm | 10 min | profilometer | 30 nm | 3.0 nm/min  | |
 +| W        | 20060116  | Vincent    | |1kV |25% Ar | 10 min    | X-ray    | 38.5 nm   | 3.9 nm/min    | |
  
 +* repaired target, with a few new Ge pieces
 +
 +----
 +
 +====== Deposition rates Z407 ======
 +
 +^ Material ^ Date ^ User ^ Pressure ^ DC Potential ^ Flow ^ Time ^ Measurement ^ Result ^ Rate ^ Notes ^
 +| SiO<sub>2</sub> | 20250211 | Boltje & Rog | 5e-3 mbar |1kV |?? sccm | 20 min | AFM | 115 nm | 5.75 nm/min | |
 +|          |      |    |           |              |      |      |             |        |      |       | 
 +
 +----
  
-===== Miscellaneous ===== 
-The digital version of the log sheet:  {{:z400logbook.pdf|}} 
z-400.1490618861.txt.gz · Last modified: 2017/03/27 12:47 by nelk
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