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atc-1800 [2017/01/26 14:46] – [Deposition rates] annetteatc-1800 [2025/02/18 15:15] (current) – [Flat Au films on Mica] wigbout
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 +====== ATC Sputtering System manual =======
 +{{ ::atc_and_atc_orion_manual_-_march_2009_-_ce.pdf |Link to the manual}}
 +
 ====== Description ====== ====== Description ======
-The ATC-1800 sputtering system is feature-rich 4-magnetron system with +The ATC-1800 sputtering system is feature-rich 4-magnetron system with a large deposition pressure range, 10e-8 mbar range background pressure, substrate heating, substrate RF bias, variable working distance, in-situ gun tilt on all sources, substrate rotation and multi-channel gas blending. The gas inlets are connected to both the chamber 
-a large deposition pressure range, 10e-8 range background pressure, +and the sources. The system has a loadlock for high throughput and a vacuum chamber that is easily accessible for all non-standard work.
-substrate cooling and heating, substrate RF bias, variable working +
-distance, in-situ gun tilt on all sources, substrate rotation and +
-multi-channel gas blending. The gas inlets are connected to both the chamber +
-and the sources. The system has a loadlock for high throughput and a +
-vacuum chamber that is easily accessible for all non-standard work.+
  
-====== Manual ====== +===== DONT's ===== 
-===== Things to avoid ===== +  * **Never make a modification** to the system without consulting a technician 
-  * **Never make a modification** to the system without consulting [[marcel_hesselberth|me]] +  * **Never transfer a hot sample holder** (cold is, say, 50 °C)
-  * **Never transfer a hot sample holder** (cold is, say, 150 degrees C)+
   * **Never hot-switch the switchbox** (switch off power first!)   * **Never hot-switch the switchbox** (switch off power first!)
   * **Never exceed 50W RF power for substrate bias**   * **Never exceed 50W RF power for substrate bias**
   * **Never transfer a sample without checking that BOTH loadlock and chamber are at vacuum (<1e-6 mbar)**   * **Never transfer a sample without checking that BOTH loadlock and chamber are at vacuum (<1e-6 mbar)**
   * **Never sputter without a sample holder in place**   * **Never sputter without a sample holder in place**
-  * **Do not stick lamps with magnets on the painted frame of the system**+ 
 +===== Do's ===== 
 +  * write the logbook 
 +  * keep an eye on changing voltage to indicate you sputtered through the target
  
 ===== Before you start ===== ===== Before you start =====
  
-Check the logbook to see if you are interfering with someone else. Fill in your name, date and time in the logbook before you start. Also mark in the logbook which sample holder you use.+Check the logbook and reservation system to see if you are interfering with someone else. Fill in your name, date and time in the logbook before you start.
  
 +====== USING THE SYSTEM =====
 ===== Venting the loadlock and loading the substrates ===== ===== Venting the loadlock and loading the substrates =====
   - Wear //powder free// gloves!    - Wear //powder free// gloves! 
-  - Clean the substrates with demi-water (if necessary), then acetone and finally IPA +  - **Check if the gate valve between the chamber and the loadlock is closed** before venting the loadlock 
-  - Mount the substrates on the sample holder. +  - Vent loadlock to get the sample holder 
-  - **Check if the valve between the chamber and the loadlock is closed** before venting the loadlock +    - Switch off the loadlock pumpgroup 
-  - Switch off the loadlock pumpgroup +    - In small steps introduce N<sub>2</sub> in the loadlock  
-  - When the top pops up close venting N<sub>2</sub> valve +  - Mount the substrates on the sample holder with silverpaint, leave paint to dry at least 5min 
-  - Put the sample holder in the loadlock with the alignment slit towards the right viewport. Always wear powderfree gloves!+  - Put the sample holder in the loadlock with the alignment slit towards the right viewport. 
   - Close the loadlock   - Close the loadlock
  
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 ===== Transfer ===== ===== Transfer =====
   - Check whether both chamber and loadlock are at vacuum   - Check whether both chamber and loadlock are at vacuum
-  - Open the loadlock valve+  - Open the gate valve 
 +  - make sure sample stage is completely up
   - Slide the magnetic drive slowly until the end stop   - Slide the magnetic drive slowly until the end stop
   - Rotate the propeller to align it with the slits in the sample holder   - Rotate the propeller to align it with the slits in the sample holder
-  - Lower the sample heating block carefully: be very careful not to bend the transfer arm+  - Lower the sample stage carefully: be very careful not to bend the transfer arm
   - Rotate the propeller __clockwise__ manually, **DO NOT USE FORCE**   - Rotate the propeller __clockwise__ manually, **DO NOT USE FORCE**
-  - Pull the sampleholder up using the joystick, rotate to see if it's levelled +  - Pull the sample stage up one cm using the joystick, rotate to see if it's levelled 
-  - Raise the sample heating block + sampleholder all the way up+  - Raise the sample stage all the way up
   - Switch on rotation (if rotation speed>40, higher risk of dropping the sample holder during heating)   - Switch on rotation (if rotation speed>40, higher risk of dropping the sample holder during heating)
   - Slide back the magnetic drive slowly until the end stop   - Slide back the magnetic drive slowly until the end stop
-  - Close the loadlock valve+  - Close the gate valve 
 +  - Lower sample stage fully (or to desired working distance)
  
 ===== Sputtering ===== ===== Sputtering =====
   - Set the substrate temperature to the desired value, let the heater bake until the desired pressure/Temperature is reached   - Set the substrate temperature to the desired value, let the heater bake until the desired pressure/Temperature is reached
   - Set the switchbox to the desired gun   - Set the switchbox to the desired gun
-  - Create a shutter program if desired 
   - Open the gases you need on the touch screen   - Open the gases you need on the touch screen
   - Set the gasflows   - Set the gasflows
-  - Switch to the capacitance gauge (CH2) +  - Switch the VAT-valve to pressure mode (typical setpoint is 5mTorr) 
-  - Switch the VAT-valve to pressure mode +  - close shutters of chamber before sputtering 
-  - Presputter at the sputtering current +  - set the settings on the power supply (to not go over ~500V/100W) 
-  - If RF/bias is needed, switch off the gun, set the pressure to 25 ubar, ignite the bias, set the pressure to the process value, adjust RF matching and restart the gun +  - press start on power supply to ignite plasma 
-  - Run the shutter program or operate the shutters manually+  - Presputter with shutter closed 
 +  - If RF/bias is needed, switch off the gun, set the pressure to 25 µbar, ignite the bias, set the pressure to the process value, adjust RF matching and restart the gun 
 +  - Open shutter and start timer
   - When done, switch off the gun and bias immediately   - When done, switch off the gun and bias immediately
   - Switch off the heater and gases (probably you also want to do this immediately)   - Switch off the heater and gases (probably you also want to do this immediately)
-  - Open VAT-valve+  - Open VAT-valve fully 
   - Switch off rotation   - Switch off rotation
-  - When the sample heating block has cooled, transfer your sample to loadlock+  - When the sample stage has cooled to <50°C, transfer your sample to loadlock
  
 ===== Removing the sample ===== ===== Removing the sample =====
-  - Transfer the sample out (see transfer)+  - Move sample stage fully up  
 +  - Open gate valve 
 +  - Move transfer arm to end stop 
 +  - lower sample stage and drop sample holder on transfer arm 
 +  - Put sample stage fully up 
 +  - move transfer arm to the loadlock 
 +  - close gate valve
   - Vent the loadlock as described above in order to remove your samples   - Vent the loadlock as described above in order to remove your samples
   - **Check whether the sample holder is really cold**   - **Check whether the sample holder is really cold**
-  - Remove the sampleholder and pump down the loadlock as described above+  - Remove the samples from the sample holder, put sample holder back and pump down the loadlock as described above
   - Fill out the logbook with all required information.    - Fill out the logbook with all required information. 
 +
 +====== Leaving the system ======
 +
 +====== Common problems and tips&tricks =====
 +  * power supply is off:
 +    * not all safety interlocks are met (cooling water flow or pressure)
 +  * flickering, unstable plasma
 +    * optimize process conditions
 +    * to thick backing plate
 +  * cannot ignite plasma
 +    * to thick backing plate
 +    * optimize process conditions
 +    * faulty power supply
 +    * target not conducting
 +
 +
 + 
 ====== Deposition rates ====== ====== Deposition rates ======
 Source tilt angle, substrate angle and source-substrate distance are process parameters that should be mentioned here! Source tilt angle, substrate angle and source-substrate distance are process parameters that should be mentioned here!
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 Current configuration: Current configuration:
 ^ Material ^  Date     ^ Sample ID     ^ Process parameters                           ^ Measured with  ^ Result  ^ Rate         ^ ^ Material ^  Date     ^ Sample ID     ^ Process parameters                           ^ Measured with  ^ Result  ^ Rate         ^
- 
 | Fe| 20161222| on Si | 5mTorr, 400mA, 7 min | XRR |41 nm | 5.8nm/min | | Fe| 20161222| on Si | 5mTorr, 400mA, 7 min | XRR |41 nm | 5.8nm/min |
 | Fe| 20161107| MgO/03 | 5mTorr, 200mA | X-ray + profilometer, 20 min, 10 min | 2 thicknesses: 51, 25nm | 2.52 nm/min| | Fe| 20161107| MgO/03 | 5mTorr, 200mA | X-ray + profilometer, 20 min, 10 min | 2 thicknesses: 51, 25nm | 2.52 nm/min|
 |Nd|20161019+20|MgO/021,22|5mTorr, 30mA, 25 & 50 min|XRR tough fit, profilometer|25 & 50 nm approx | 1nm/min| |Nd|20161019+20|MgO/021,22|5mTorr, 30mA, 25 & 50 min|XRR tough fit, profilometer|25 & 50 nm approx | 1nm/min|
-| W      | 201611xx  | MgO / 011, 012| 10 mTorr, 100mA,     | XRR 161125a|20nm|1.48nm/min+| W      | 20161011+12 | MgO/011,012| 5 mTorr, 100mA, 25min, 37.5min   | XRR | |1.48nm/min| 
 + 
 +Older rates 
 +^ Material ^  Date     ^ Sample ID     ^ Process parameters                           ^ Measured with  ^ Result  ^ Rate         ^
 | Co     | 20160111  | Co       | 5 mTorr, 200 mA, 22 min        | X-ray          | 70.6 nm | 3.21/min     | | Co     | 20160111  | Co       | 5 mTorr, 200 mA, 22 min        | X-ray          | 70.6 nm | 3.21/min     |
 | Ag     | 20150402  | Ag_cal   | 5 mTorr, 100 mA, 5 min         | X-ray          | 39.0 nm | 7.8 nm/min   | | Ag     | 20150402  | Ag_cal   | 5 mTorr, 100 mA, 5 min         | X-ray          | 39.0 nm | 7.8 nm/min   |
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 | Cu     | 20150402  | Cu_cal   | 5 mTorr, 100 mA, 10 min         | X-ray          | 31.1 nm | 3.11 nm/min   | | Cu     | 20150402  | Cu_cal   | 5 mTorr, 100 mA, 10 min         | X-ray          | 31.1 nm | 3.11 nm/min   |
 | Nb     | 20150402  | Nb_cal   | 5 mTorr, 300 mA, 10 min         | X-ray          | 48.0 nm | 4.80 nm/min   | | Nb     | 20150402  | Nb_cal   | 5 mTorr, 300 mA, 10 min         | X-ray          | 48.0 nm | 4.80 nm/min   |
- 
- 
-Older rates 
-^ Material ^  Date     ^ Sample ID     ^ Process parameters                           ^ Measured with  ^ Result  ^ Rate         ^ 
 | Ag     | 20131104  | Ag10min   | 5 mTorr, 100 mA, 10 min, 4 mm tilt         | X-ray          | 82.8 nm | 8.28 nm/min   | | Ag     | 20131104  | Ag10min   | 5 mTorr, 100 mA, 10 min, 4 mm tilt         | X-ray          | 82.8 nm | 8.28 nm/min   |
 | Co     | 20130911  | Co_cal   | 5 mTorr, 100 mA, 15 min                   | X-ray          | 11.48 nm | 0.765 nm/min   | | Co     | 20130911  | Co_cal   | 5 mTorr, 100 mA, 15 min                   | X-ray          | 11.48 nm | 0.765 nm/min   |
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 loading into ATC. Use a Cu holder for the mica, no adhesives loading into ATC. Use a Cu holder for the mica, no adhesives
  
-Pressure +  * Pressure: 20 mTorr setpoint, low -7 background 
- +  * Ar Flow: 24 
-20 mTorr setpoint, low -7 background +  * Temperature: 300deg C for deposition.  
- +  * Current: 200 mA for 20 minutes, then 2 minutes 45 mA 
-Ar Flow +  * Voltage: Around 500 / 380 
- +  * O2 flow: 1 
-24 +  * Heating/cooling rate: Heating: Heat up before deposition to 450  to bake out the dirt from chamber, holder & substrate. Radiative cooldown to 300 for deposition. Anneal for 1-2hrs postdeposition at 300. Cooldown radiative by switching off heat. 
- +  * RMS roughness (and better roughness data if available): I think a picture says more than 1000 roughness values. Picture: stm image in air, with a lot of vibrations. Image size 740x640 nm. Shows the typical variation of terrace sizes you find on these samples.
-Temperature +
- +
-300deg C for deposition.  +
- +
-Current +
- +
-200 mA for 20 minutes, then 2 minutes 45 mA +
- +
-Voltage +
- +
-Around 500 / 380 +
- +
-O2 flow +
- +
-1 +
- +
-Heating/cooling rate +
- +
-Heating: Heat up before deposition to 450  to bake out the dirt from +
-chamber, holder & substrate. Radiative cooldown to 300 for deposition. +
-Anneal for 1-2hrs postdeposition at 300. Cooldown radiative by switching +
-off heat. +
- +
-and +
- +
- +
- +
-RMS roughness (and better roughness data if available) +
- +
-I think a picture says more than 1000 roughness values.. +
- +
- +
- +
-Picture: stm image in air, with a lot of vibrations. Image size 740x640 +
-nm. Shows the typical variation of terrace sizes you find on these +
-samples. +
- +
- +
- +
  
 Note 1: This recipe has been taken over (mutatis mutandis) from the Note 1: This recipe has been taken over (mutatis mutandis) from the
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   * The digital log sheet: {{wiki:atc_logbook.doc}}   * The digital log sheet: {{wiki:atc_logbook.doc}}
   * The new digital log sheet: {{:atc_logbook1.pdf|}}   * The new digital log sheet: {{:atc_logbook1.pdf|}}
 +
 +====== Maintenance ======
atc-1800.1485441993.txt.gz · Last modified: 2017/01/26 14:46 by annette
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