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ion_beam_etcher [2018/07/12 14:27] – [Pressure gauges] scholmaion_beam_etcher [2025/05/19 14:18] (current) – [When done] wigbout
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 processing typically low energies are used to avoid damage to the imaging resist. processing typically low energies are used to avoid damage to the imaging resist.
  
-The system is equipped with a loadlock with a (sputtering gun, removed jan 2012) knudsen cell so that a deposition step+The system is equipped with a loadlock with a knudsen cell so that a deposition step
 can be performed immediately after etching (a so called self aligned process). can be performed immediately after etching (a so called self aligned process).
 The substrate table can be tilted and can rotate in the tilt plane. The substrate table can be tilted and can rotate in the tilt plane.
  
 ====== Manual Ion beam etcher ====== ====== Manual Ion beam etcher ======
 +Change the input source on the display to DisplayPort if it isn't on the correct input source.\\
 +Switch over USB cables of mouse and keyboard.
  
 ===== Mounting sample on holder ===== ===== Mounting sample on holder =====
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   * Flip TP switch up to start the turbo pump.   * Flip TP switch up to start the turbo pump.
   * At 10 mbar switch to TM pressure gauge.   * At 10 mbar switch to TM pressure gauge.
-  * Make sure green valves is closed, set black valve to ""IBE"" and open needle valve. Never turn this to "RIE", because this is an unconnected conduct, which will cause air to flow into the Argon conducts. +  * Make sure green valves is closed, set black valve SLOWLY to ""IBE"", Keep an eye on the pressure while doing this. Never turn this to "RIE", because this is an unconnected conduct, which will cause air to flow into the Argon conducts
-  * Wait (~30 mins) until pressure is <1.0e-5 to 1.5e-5 mBar. The turbo pump should now be at maximum speed.+  * Set MFC setpoint to 0 with the software. 
 +  * Set valve override to OFF. You're now able to write a setpoint to the MFC. 
 +  * Slowly increase setpoint in steps of 5% to pump away left over Ar in the line. Open MFC fully (100%) when pressure doesn't increase anymore. 
 +  * Put the setpoint to 0 and put valve override to 'OFF'
 +  * Wait (~30 mins) until pressure is <1.0e-5.
  
  
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   * Cool with N<sub>2</sub> if needed (Resist can become too hard to remove if not cooled, especially if you etch longer than 4 min).   * Cool with N<sub>2</sub> if needed (Resist can become too hard to remove if not cooled, especially if you etch longer than 4 min).
-    * {{images:n2barrel.png}} 
     * Check if N<sub>2</sub> barrel needs to be refilled.     * Check if N<sub>2</sub> barrel needs to be refilled.
     * Attach Hose     * Attach Hose
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   * Open green valve   * Open green valve
   * Set Argon pressure to 2,5e-4 to 4.0e-4 mBar with program on the computer   * Set Argon pressure to 2,5e-4 to 4.0e-4 mBar with program on the computer
-    * If you can't find the computerprogram to do this, switch the screen to the IBE computer. 
-    * If you are on the right computer but the software seems to be closed, you can find the program by clicking on the terminal icon on top of the desktop. Type 'cd MFC/code', press 'enter', type 'python debiantest.py' and press 'enter' again. Enlarge the appearing window! 
   * Turn on main power for ion beam (watch safety fuse)   * Turn on main power for ion beam (watch safety fuse)
   * Select recipe (#10)   * Select recipe (#10)
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     * press 'enter'     * press 'enter'
     * press 'view recipe'     * press 'view recipe'
-  * Make sure the ion canon shutter is retracted (black vertical knob on the left) and doesn't touch the sample holder.+  * **Make sure the ion canon shutter doesn't touch the sample holder.**
   * Press "source" on control panel (this step is optional, it is done automatically once you do the next step)   * Press "source" on control panel (this step is optional, it is done automatically once you do the next step)
   * To start etching press "beam" on control panel   * To start etching press "beam" on control panel
   * Elapsed time is shown on display. You must stop the system manually once the desired etching time is reached.   * Elapsed time is shown on display. You must stop the system manually once the desired etching time is reached.
 +  * Open shutter, start the timer
   * Press "source" to stop   * Press "source" to stop
   * Turn off main power for ion beam.   * Turn off main power for ion beam.
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 ===== When done ===== ===== When done =====
  
-  * Let ion gun cool by increasing Ar flow (1e-2 mbar2 min)+  * Let ion gun cool by increasing Ar flow such that the pressure is at 1e-2 mbar (typically MFC: 20%) for about 2 min.
   * If you cooled your sample, let the sample warm up for at least 15 min (08-04-21: Or do 5 min and do another 10 mins at 1 bar) while pumping (this to avoid possible pollution of oil or other things on your priceless sample).   * If you cooled your sample, let the sample warm up for at least 15 min (08-04-21: Or do 5 min and do another 10 mins at 1 bar) while pumping (this to avoid possible pollution of oil or other things on your priceless sample).
   * Close green Argon valve.   * Close green Argon valve.
-  * Let the Argon be pumped out the conduct and set the Argon needle valve closed.+  * Let the Argon be pumped out the conduct, increase the MFC setpoint slowly to 100% in steps of 5%. When the pressure doesn't is stabilizing open the MFC fully. 
 +  * Wait a few minutes and close MFC.
   * Set black Argon valve to neutral   * Set black Argon valve to neutral
   * Turn off turbo pump   * Turn off turbo pump
-  * Turn off rotary pump+  * Close valve to the rotary pump 
 +  * Vent the system slowly with the "vent" switch (start with 1 sec)
   * Wait until turbo pump has decelerated   * Wait until turbo pump has decelerated
-  * Vent the system slowly with the "vent" switch (start with 1 sec) +  * If you cooled with N<sub>2</sub>, you need to let your sample stay inside the lock at close to 1 bar (~10 mins) to let the sample holder warm up. As long as it is below 0, Ice may form, once you remove it.
-  * If you cooled with N<sub>2</sub>, you need to let your sample stay inside the lock at close to 1 bar (~10 mins) to let the sampleholder warm up. As long as it is below 0, Ice may form, once you remove it.+
   * Remove sample holder   * Remove sample holder
   * Pump chamber down for a few minutes with rotation pump (no turbo).   * Pump chamber down for a few minutes with rotation pump (no turbo).
-  * Remove sample, clean sample holder with acetone and IPA+  * Turn on the Turbo (TP switch) 
-  * Shut down rotation pump if you are the last person on the day+  * Remove sample, clean sample holder with Silver paint dilutent, acetone and/or IPA. 
-  * Fill in the log sheets. COPIES OF THE LOG SHEET ARE HERE: {{wiki:ibe-logbookv2.xls}}.+  * Fill in the logbook
  
-===== Advanced options ===== 
  
-  * Pressure Gages: 
-    * (10-1000 mBar) The high pressure gage 'DM' can be selected manually. 
-    * (Below 10 mbar - "pirani") you can switch to 'TM'. 
-    * (High Vacuum - "penning"). The system will (should) automatically switch to the lowest pressure gage 'PM'. You can turn off the high vacuum pressure gage 'PM' "penning" by pressing 'HV'. 
-    * You can see which pressure gage is active at the display indicator direcltly above it. 
- 
-{{:wiki:wiki:ibe-logbook.xls|}} 
  
 ====== Pressure gauges ====== ====== Pressure gauges ======
  
-Pressure control unit: Leybold and Hereaus Combivac CM33+  * Pressure Gauges: 
 +    * (10-1000 mBar) The high pressure gage 'DM' can be selected manually. 
 +    * (Below 10 mbar - "pirani") you can switch to 'TM'
 +    * (High Vacuum - "penning"). The system will (should) automatically switch to the lowest pressure gauge 'PM'. You can turn off the high vacuum pressure gauge 'PM' "penning" by pressing 'HV'
 +    * You can see which pressure guage is active at the display indicator directly above it. 
 + 
 +Pressure control unit: Leybold and Hereaus Combivac CM33.\\
 The pressure control unit will switch automatically between the different pressure sensors. The pressure control unit will switch automatically between the different pressure sensors.
  
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 | SiO<sub>2</sub> | 20120907 | Boltje | 1090 <sup>o</sup>C | X-ray | 15 min | 15 nm | 1 nm/min | | | SiO<sub>2</sub> | 20120907 | Boltje | 1090 <sup>o</sup>C | X-ray | 15 min | 15 nm | 1 nm/min | |
 | SiO<sub>2</sub> | 20140321 | Boltje | 1090 <sup>o</sup>C | X-ray | 30 min | 140 nm | 4.67 nm/min | | | SiO<sub>2</sub> | 20140321 | Boltje | 1090 <sup>o</sup>C | X-ray | 30 min | 140 nm | 4.67 nm/min | |
 +
 +===== Miscellaneous =====
 +
 +{{:wiki:wiki:ibe-logbook.xls|}}
ion_beam_etcher.1531405662.txt.gz · Last modified: 2018/07/12 14:27 by scholma

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