ion_beam_etcher
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| ion_beam_etcher [2018/07/17 10:13] – [When done] scholma | ion_beam_etcher [2025/05/19 14:18] (current) – [When done] wigbout | ||
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| processing typically low energies are used to avoid damage to the imaging resist. | processing typically low energies are used to avoid damage to the imaging resist. | ||
| - | The system is equipped with a loadlock with a (sputtering gun, removed jan 2012) knudsen cell so that a deposition step | + | The system is equipped with a loadlock with a knudsen cell so that a deposition step |
| can be performed immediately after etching (a so called self aligned process). | can be performed immediately after etching (a so called self aligned process). | ||
| The substrate table can be tilted and can rotate in the tilt plane. | The substrate table can be tilted and can rotate in the tilt plane. | ||
| ====== Manual Ion beam etcher ====== | ====== Manual Ion beam etcher ====== | ||
| - | Change the input source on the display to VGA if it isn't on the correct input source. | + | Change the input source on the display to DisplayPort |
| + | Switch over USB cables of mouse and keyboard. | ||
| - | Make sure shutter is not in contact with sample holder when starting the process! | ||
| ===== Mounting sample on holder ===== | ===== Mounting sample on holder ===== | ||
| Line 44: | Line 44: | ||
| * Set MFC setpoint to 0 with the software. | * Set MFC setpoint to 0 with the software. | ||
| * Set valve override to OFF. You're now able to write a setpoint to the MFC. | * Set valve override to OFF. You're now able to write a setpoint to the MFC. | ||
| - | * Slowly increase setpoint in steps of 5% to pump away left over Ar in the line. Open MFC fully (valve override OPEN) when pressure doesn' | + | * Slowly increase setpoint in steps of 5% to pump away left over Ar in the line. Open MFC fully (100%) when pressure doesn' |
| - | * Put valve override to ' | + | * Put the setpoint to 0 and put valve override to ' |
| * Wait (~30 mins) until pressure is <1.0e-5. | * Wait (~30 mins) until pressure is <1.0e-5. | ||
| Line 57: | Line 57: | ||
| * Cool with N< | * Cool with N< | ||
| - | * {{images: | ||
| * Check if N< | * Check if N< | ||
| * Attach Hose | * Attach Hose | ||
| Line 92: | Line 91: | ||
| ===== When done ===== | ===== When done ===== | ||
| - | * Let ion gun cool by increasing Ar flow (1e-2 mbar, 2 min) | + | * Let ion gun cool by increasing Ar flow such that the pressure is at 1e-2 mbar (typically MFC: 20%) for about 2 min. |
| * If you cooled your sample, let the sample warm up for at least 15 min (08-04-21: Or do 5 min and do another 10 mins at 1 bar) while pumping (this to avoid possible pollution of oil or other things on your priceless sample). | * If you cooled your sample, let the sample warm up for at least 15 min (08-04-21: Or do 5 min and do another 10 mins at 1 bar) while pumping (this to avoid possible pollution of oil or other things on your priceless sample). | ||
| * Close green Argon valve. | * Close green Argon valve. | ||
ion_beam_etcher.1531822422.txt.gz · Last modified: 2018/07/17 10:13 by scholma