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--- plasmalab_90 [2007/10/08 14:20] – hessel
+++ plasmalab_90 [2018/06/08 07:06] (current) – [Description] scholma
@@ Line 7: / Line 7: @@
 with MFC's, process pressure is regulated by feeding the value from the gas-independent baratron
 (diaphragm gauge) to an MKS control valve that throttles the turbo pump. Substrate temperature can
 be set from 0-60 C.
 The system has a loadlock and fully automated loading/unloading that allows use of toxic gases.
-Current configuration: Fluorine etcher, SF6, CF4, O2, Ar, N2.
+==== Current gas configuration ====
+  * SF6
+  * CF4
+  * O2
+  * Ar
+  * CHF3
+  * empty slot
 ====== Manual PlasmaLab 90+ ======
 The technical logbook can be found [[PlasmaLab 90+ logbook|here]]
@@ Line 23: / Line 30: @@
   - In case the system is inactive:
      - Start the chiller pump (611)
      - Switch on chiller cooler(!) (611)
      - Set 6.0 bar compressed air (611)
      - Open BOTH (red) cooling water valves behind the system(!)
@@ Line 37: / Line 44: @@
      - If leaktight: open gas tanks. Check optimum setpoint of the pressure regulator as well (according to the Millipore / Tylan FC260 4V flow controller manual) is 30 psig, that's 2.0 bar absolute or 1.0 bar overpressure)
   - Chamber must be at base pressure (<1e-5 torr) before processing
+//Note: currently (august 2010) the cooler is defect. Cooling is performed with tap water (tap is in room 611). Choose 92 'C as your process temperature (this will not be the real temperature!), otherwise the machine will get stuck in the "adjusting temperature" step at the start of a process.//
 ===== Loading your samples =====
@@ Line 62: / Line 71: @@
 DO NOT LEAVE THE LOADLOCK VENTED LONGER THAN 5 MINUTES
-  - On the 'Load' page, click 'Unoad' to unload the wafer
+  - On the 'Load' page, click 'Unload' to unload the wafer
   - Click 'Vent' loadlock
   - The system will go through 2 flushing cycles, then vent
@@ Line 71: / Line 80: @@
 DO WRITE YOUR FINDINGS IN THE LOGBOOK!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!!
+===== Troubleshooting =====
+Often there are problems with pumping or the communication between the machine and the software.
+A procedure that solves many of these problems (//not to be followed when a problem occurs during wafer transfer!//):
+*Click "Abort" on the load page
+*Close software and shutdown computer
+*Switch off machine (red **push**button at the right of the machine)
+*Switch on machine (green push button at the right of the machine)
+*Restart computer and start software
+*Check whether substrate cooling is on (august 2010: because cooler is defect, read: "check whether tap water is running")
+*On the load page, start chamber and loadlock rotary pumps.
+*Evacuate chamber and loadlock (even when you desire to vent the loadlock!)
+After these steps, the software and the machine should be in normal operation
 ====== Etching rates ======
-^ Material ^  Date    ^ Sample ID ^ Thickness ^ Etching time  ^ Recipe ^ Gas ^ Rate           ^
+^ Material^  Date   ^ User ^ Thickness ^ Etching time  ^ Power ^ Pressure ^ Gasses [sccm] ^ Etch-Rate ^
-| PMMA    | 20050311 |    bla  |  bla    | 3:52       |  10  | O2, 50 mtorr | 0.215 nm/sec |
+| MoGe    | 01.03.2012 |       | 19.4    | 30s           | 100W  | 75mtorr  | CF4(30) / Ar(10)        | 0.65 nm/s |
+| SiO2    | 15Jan2018 | Douwe | multiple| multiple      | 150W  | 30mtorr  | O2(3) / Ar(10) / CHF3(15) | 16nm/min (0.27nm/sec) |
+| PMMA 950K  | 15Jan2018 | Douwe | multiple| multiple      | 150W  | 30mtorr  | O2(3) / Ar(10) / CHF3(15) | 74nm/min (1.23nm/sec) |
 \\
 To ash PMMA/MMA double layer resist and/or clean your SiO2 chip from any other organic crap, use 20 min in 30Torr O2 plasma (30sccm flow, 16'C sample temp.)